2
RF Device Data
Freescale Semiconductor
MRF8P20161HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(VDS
=65Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics
(1)
Gate Threshold Voltage
(VDS
=10Vdc,ID
=116μAdc)
VGS(th)
1.2
1.8
2.7
Vdc
Gate Quiescent Voltage
(VDD
=28Vdc,IDA
= 550 mAdc, Measured in Functional Test)
VGS(Q)
1.9
2.7
3.4
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=1.5Adc)
VDS(on)
0.05
0.27
0.4
Vdc
Functional Tests
(2,3)
(In Freescale Doherty Test Fixture, 50 ohm system) VDD
=28Vdc,IDQA
= 550 mA, VGSB
=1.6Vdc,Pout
=37WAvg.,
, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
f = 1920 MHz, Single--Carrier W--CDMA
measured in 3.84 MHz Channel Bandwidth @
±5MHzOffset.
Power Gain
Gps
15.0
16.4
18.0
dB
Drain Efficiency
ηD
42.2
45.8
?
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
6.5
7.0
?
dB
Adjacent Channel Power Ratio
ACPR
?
--30.4
--27.3
dBc
Typical Broadband Performance
(3)
(In Freescale Doherty Test Fixture, 50 ohm system) VDD
=28Vdc,IDQA
= 550 mA, VGSB
=1.6Vdc,
, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
Pout
= 37 W Avg., Single--Carrier W--CDMA
measured in 3.84 MHz Channel Bandwidth @
±5MHzOffset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz
16.5
46.2
6.9
--27.9
1900 MHz
16.5
46.0
6.9
--29.1
1920 MHz
16.4
45.8
7.0
--30.4
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in a Symmetrical Doherty configuration.
(continued)
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